
| Type | Description | ||
|---|---|---|---|
| Budgetary Price €/1k | 1.11, 1.11 | Ciss | 4100 pF |
| Coss | 750 pF | ID (@25°C) max | 83 A |
| IDpuls max | 332 A | Micro-stencil | IRF66MN-25 |
| Operating Temperature range | -40 °C to 150 °C | Package | DirectFET (M) |
| Polarity | N | Ptot max | 78 W |
| QG (typ @10V) | 56 nC | RDS (on) (@10V) max | 5.6 mΩ |
| Rth | 1.6 K/W | VDS max | 100 V |
| VGS(th) range | 2 V to 3.5 V | VGS(th) | 2.7 V |
| Product Status | not for new design not for new design | Infineon Package | MG-WDSON-5 MG-WDSON-5 |
| Package Name | N/A N/A | Packing Size | 4800 5000 |
YG GROUP supports reliable sourcing through quality controls and compliance documentation. Please confirm product requirements, applicable certifications and supporting documents before ordering.
BSB056N10NN3 G is an authentic electronic component manufactured by Infineon, categorized under Transistors. It is supplied in the standard DirectFET (M) package footprint, providing industry-standard mechanical dimensions and terminal configurations for board-level assembly. Full pinout configurations, physical footprint drawings, and rated operating tolerances are documented in the official BSB056N10NN3 G datasheet above.
Electronic component spot-market pricing for BSB056N10NN3 G fluctuates based on real-time global availability, production date codes, minimum order quantities (MOQ), and packaging formats (e.g., Reel, Tube, Tray). Using an RFQ ensures you receive accurate, real-time volume pricing tied to verified, traceable inventory rather than stale catalog estimates.
Lead times for BSB056N10NN3 G depend on whether stock is dispatched from our central hub or regional franchise partners. Ready-to-ship inventory typically leaves the warehouse within 1–3 business days following quality inspection, while factory-direct or back-ordered allocations are confirmed with an estimated ship date upon RFQ reply.
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