
| Type | Description | ||
|---|---|---|---|
| Package | TO-252 | Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 32A | Pd - Power Dissipation | 1.2W;66W |
| RDS(on) | 24mΩ@10V,16A | Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Number | 1 N-Channel | Input Capacitance(Ciss) | 2nF@25V |
| Gate Charge(Qg) | 41nC@10V | CNHTS | 8541290000 |
| USHTS | 8541290095 | TARIC | 8541290000 |
| CAHTS | 8541290000 | BRHTS | 85412910 |
| INHTS | 85412900 | MXHTS | 8541.29.99 |
YG GROUP (YUGUANG INTERNATIONAL(HK)CO.,LTD) supports reliable sourcing through quality controls and compliance documentation. Please confirm product requirements, applicable certifications and supporting documents before ordering.
NP32N055SDE-E1-AZ is an authentic electronic component manufactured by Renesas, categorized under Transistors. It is supplied in the standard TO-252 package footprint, providing industry-standard mechanical dimensions and terminal configurations for board-level assembly. Full pinout configurations, physical footprint drawings, and rated operating tolerances are documented in the official NP32N055SDE-E1-AZ datasheet above.
Electronic component spot-market pricing for NP32N055SDE-E1-AZ fluctuates based on real-time global availability, production date codes, minimum order quantities (MOQ), and packaging formats (e.g., Reel, Tube, Tray). Using an RFQ ensures you receive accurate, real-time volume pricing tied to verified, traceable inventory rather than stale catalog estimates.
Lead times for NP32N055SDE-E1-AZ depend on whether stock is dispatched from our central hub or regional franchise partners. Ready-to-ship inventory typically leaves the warehouse within 1–3 business days following quality inspection, while factory-direct or back-ordered allocations are confirmed with an estimated ship date upon RFQ reply.
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