
The 1011GN-1200V/VEL are internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistors capable of providing over 18.5 dB gain, 1200 Watts of pulsed RF output power at 32us, 2% duty cycle pulse format across the 1030 to 1090 MHz band and can also transmit Mode-S ELM pulse format. The transistor has an internal pre-match for optimal performance and uses gold metallization to provide highest reliability and superior ruggedness.
YG GROUP (YUGUANG INTERNATIONAL(HK)CO.,LTD) supports reliable sourcing through quality controls and compliance documentation. Please confirm product requirements, applicable certifications and supporting documents before ordering.
1011GN-1200VEL-Power-Transistor is an authentic electronic component manufactured by Microchip, categorized under Amplifier ICs. It is supplied in the standard manufacturer-specified package footprint, providing industry-standard mechanical dimensions and terminal configurations for board-level assembly. Full pinout configurations, physical footprint drawings, and rated operating tolerances are documented in the official 1011GN-1200VEL-Power-Transistor datasheet above.
Electronic component spot-market pricing for 1011GN-1200VEL-Power-Transistor fluctuates based on real-time global availability, production date codes, minimum order quantities (MOQ), and packaging formats (e.g., Reel, Tube, Tray). Using an RFQ ensures you receive accurate, real-time volume pricing tied to verified, traceable inventory rather than stale catalog estimates.
Lead times for 1011GN-1200VEL-Power-Transistor depend on whether stock is dispatched from our central hub or regional franchise partners. Ready-to-ship inventory typically leaves the warehouse within 1–3 business days following quality inspection, while factory-direct or back-ordered allocations are confirmed with an estimated ship date upon RFQ reply.
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