
| Type | Description | ||
|---|---|---|---|
| Ciss | 9000 pF | Coss | 2300 pF |
| ID (@25°C) max | 180 A | IDpuls max | 400 A |
| Micro-stencil | IRF66MX-25 | Operating Temperature range | -40 °C to 150 °C |
| Package | DirectFET(M) | Polarity | N |
| Ptot max | 89 W | QG (typ @10V) | 107 nC |
| RDS (on) (@10V) max | 1.5 mΩ | Rth | 1.4 K/W |
| VDS max | 40 V | VGS(th) range | 2 V to 4 V |
YG GROUP (YUGUANG INTERNATIONAL(HK)CO.,LTD) supports reliable sourcing through quality controls and compliance documentation. Please confirm product requirements, applicable certifications and supporting documents before ordering.
BSB015N04NX3 G is an authentic electronic component manufactured by Infineon, categorized under Transistors. It is supplied in the standard DirectFET(M) package footprint, providing industry-standard mechanical dimensions and terminal configurations for board-level assembly. Full pinout configurations, physical footprint drawings, and rated operating tolerances are documented in the official BSB015N04NX3 G datasheet above.
Electronic component spot-market pricing for BSB015N04NX3 G fluctuates based on real-time global availability, production date codes, minimum order quantities (MOQ), and packaging formats (e.g., Reel, Tube, Tray). Using an RFQ ensures you receive accurate, real-time volume pricing tied to verified, traceable inventory rather than stale catalog estimates.
Lead times for BSB015N04NX3 G depend on whether stock is dispatched from our central hub or regional franchise partners. Ready-to-ship inventory typically leaves the warehouse within 1–3 business days following quality inspection, while factory-direct or back-ordered allocations are confirmed with an estimated ship date upon RFQ reply.
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|---|---|---|---|---|---|
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![]() | Infineon | -- | 6,900 | ||
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