
| Type | Description | ||
|---|---|---|---|
| Pd - Power Dissipation | 335W | Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | Input Capacitance(Cies) | 6.2nF@25V |
| IGBT Type | FS (Field Stop) | Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.95V@15V,100A |
| Operating Temperature | -40℃~+150℃@(Tj) | CNHTS | 8541600000 |
| USHTS | 8541600080 | TARIC | 8541600000 |
| CAHTS | 8541600010 | BRHTS | 85416010 |
| INHTS | 85416000 | MXHTS | 8541.60.01 |
YG GROUP (YUGUANG INTERNATIONAL(HK)CO.,LTD) supports reliable sourcing through quality controls and compliance documentation. Please confirm product requirements, applicable certifications and supporting documents before ordering.
FS100R07N3E4_B11 is an authentic electronic component manufactured by Infineon, categorized under Transistors. It is supplied in the standard manufacturer-specified package footprint, providing industry-standard mechanical dimensions and terminal configurations for board-level assembly. Full pinout configurations, physical footprint drawings, and rated operating tolerances are documented in the official FS100R07N3E4_B11 datasheet above.
Electronic component spot-market pricing for FS100R07N3E4_B11 fluctuates based on real-time global availability, production date codes, minimum order quantities (MOQ), and packaging formats (e.g., Reel, Tube, Tray). Using an RFQ ensures you receive accurate, real-time volume pricing tied to verified, traceable inventory rather than stale catalog estimates.
Lead times for FS100R07N3E4_B11 depend on whether stock is dispatched from our central hub or regional franchise partners. Ready-to-ship inventory typically leaves the warehouse within 1–3 business days following quality inspection, while factory-direct or back-ordered allocations are confirmed with an estimated ship date upon RFQ reply.
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