
| Type | Description | ||
|---|---|---|---|
| Package | D2PAK(TO-263) | Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 4.1A | RDS(on) | 3Ω@10V,2.5A |
| Pd - Power Dissipation | 125W | Gate Threshold Voltage (Vgs(th)) | 4V |
| Operating Junction Temperature Range | -55℃~+150℃@(Tj) | Number | 1 N-Channel |
| Input Capacitance(Ciss) | 1.3nF@25V | Gate Charge(Qg) | 78nC@10V |
| CNHTS | 8541290000 | USHTS | 8541290095 |
| TARIC | 8541290000 | CAHTS | 8541290000 |
| BRHTS | 85412910 | INHTS | 85412900 |
| MXHTS | 8541.29.99 |
YG GROUP (YUGUANG INTERNATIONAL(HK)CO.,LTD) supports reliable sourcing through quality controls and compliance documentation. Please confirm product requirements, applicable certifications and supporting documents before ordering.
SIHFBE30STRL-GE3 is an authentic electronic component manufactured by Vishay, categorized under Transistors. It is supplied in the standard D2PAK(TO-263) package footprint, providing industry-standard mechanical dimensions and terminal configurations for board-level assembly. Full pinout configurations, physical footprint drawings, and rated operating tolerances are documented in the official SIHFBE30STRL-GE3 datasheet above.
Electronic component spot-market pricing for SIHFBE30STRL-GE3 fluctuates based on real-time global availability, production date codes, minimum order quantities (MOQ), and packaging formats (e.g., Reel, Tube, Tray). Using an RFQ ensures you receive accurate, real-time volume pricing tied to verified, traceable inventory rather than stale catalog estimates.
Lead times for SIHFBE30STRL-GE3 depend on whether stock is dispatched from our central hub or regional franchise partners. Ready-to-ship inventory typically leaves the warehouse within 1–3 business days following quality inspection, while factory-direct or back-ordered allocations are confirmed with an estimated ship date upon RFQ reply.
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