
The ICPB2002 is a GaN on SiC discrete HEMT that operates from DC-12GHz. The design is optimized for power and efficiency using field plate technology. The device provides 42.5dBm Nominal P3dB and a maximum PAE of 65% at 6 GHz, and is ideally suited for Aerospace and Defense applications.
YG GROUP supports reliable sourcing through quality controls and compliance documentation. Please confirm product requirements, applicable certifications and supporting documents before ordering.
ICPB2002-Power-Transistor is an authentic electronic component manufactured by Microchip, categorized under Amplifier ICs. It is supplied in the standard manufacturer-specified package footprint, providing industry-standard mechanical dimensions and terminal configurations for board-level assembly. Full pinout configurations, physical footprint drawings, and rated operating tolerances are documented in the official ICPB2002-Power-Transistor datasheet above.
Electronic component spot-market pricing for ICPB2002-Power-Transistor fluctuates based on real-time global availability, production date codes, minimum order quantities (MOQ), and packaging formats (e.g., Reel, Tube, Tray). Using an RFQ ensures you receive accurate, real-time volume pricing tied to verified, traceable inventory rather than stale catalog estimates.
Lead times for ICPB2002-Power-Transistor depend on whether stock is dispatched from our central hub or regional franchise partners. Ready-to-ship inventory typically leaves the warehouse within 1–3 business days following quality inspection, while factory-direct or back-ordered allocations are confirmed with an estimated ship date upon RFQ reply.
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