
E Class Earless Driver GaN Transistor – Key Features
1200-1400MHz • 15W Output Power • CW and Pulsed
Common Source • Class AB • 50VDD Bias Voltage
>60% Efficiency Across the Frequency Band
Extremely Compact Size
17.8 dB Typical Power Gain
0.3 dB Typical Excellent Gain Flatness
L-Band Radars, Communication, Industrial, General Purpose
All gold metallization and eutectic die attach for highest reliability
50Ω in/out lumped element very small footprint plug & play pallets available
YG GROUP (YUGUANG INTERNATIONAL(HK)CO.,LTD) supports reliable sourcing through quality controls and compliance documentation. Please confirm product requirements, applicable certifications and supporting documents before ordering.
1214GN-15E-Power-Transistor is an authentic electronic component manufactured by Microchip, categorized under Amplifier ICs. It is supplied in the standard manufacturer-specified package footprint, providing industry-standard mechanical dimensions and terminal configurations for board-level assembly. Full pinout configurations, physical footprint drawings, and rated operating tolerances are documented in the official 1214GN-15E-Power-Transistor datasheet above.
Electronic component spot-market pricing for 1214GN-15E-Power-Transistor fluctuates based on real-time global availability, production date codes, minimum order quantities (MOQ), and packaging formats (e.g., Reel, Tube, Tray). Using an RFQ ensures you receive accurate, real-time volume pricing tied to verified, traceable inventory rather than stale catalog estimates.
Lead times for 1214GN-15E-Power-Transistor depend on whether stock is dispatched from our central hub or regional franchise partners. Ready-to-ship inventory typically leaves the warehouse within 1–3 business days following quality inspection, while factory-direct or back-ordered allocations are confirmed with an estimated ship date upon RFQ reply.
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