
The 1012GN-800V is an internally matched, COMMON SOURCE, high power class AB GaN on SiC transistor specifically designed for 20us, 6% duty cycle radar systems. It provides over 19dB gain, 800 Watts of pulsed RF output power using 20us, 6% pulse format at 1025-1150MHz. The transistor has internal prematch for optimal performance. This transistor is specifically designed for Avionics radar applications and uses gold metallization to provide highest reliability and superior ruggedness.
YG GROUP (YUGUANG INTERNATIONAL(HK)CO.,LTD) supports reliable sourcing through quality controls and compliance documentation. Please confirm product requirements, applicable certifications and supporting documents before ordering.
1012GN-800V-Power-Transistor is an authentic electronic component manufactured by Microchip, categorized under Amplifier ICs. It is supplied in the standard manufacturer-specified package footprint, providing industry-standard mechanical dimensions and terminal configurations for board-level assembly. Full pinout configurations, physical footprint drawings, and rated operating tolerances are documented in the official 1012GN-800V-Power-Transistor datasheet above.
Electronic component spot-market pricing for 1012GN-800V-Power-Transistor fluctuates based on real-time global availability, production date codes, minimum order quantities (MOQ), and packaging formats (e.g., Reel, Tube, Tray). Using an RFQ ensures you receive accurate, real-time volume pricing tied to verified, traceable inventory rather than stale catalog estimates.
Lead times for 1012GN-800V-Power-Transistor depend on whether stock is dispatched from our central hub or regional franchise partners. Ready-to-ship inventory typically leaves the warehouse within 1–3 business days following quality inspection, while factory-direct or back-ordered allocations are confirmed with an estimated ship date upon RFQ reply.
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